TPS1101, TPS1101Y دیتاشیت

TPS1101, TPS1101Y

مشخصات دیتاشیت

نام دیتاشیت TPS1101, TPS1101Y
حجم فایل 760.317 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت TPS1101, TPS1101Y

دانلود دیتاشیت

سایر مستندات

TPS1101PWR 15 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments TPS1101PWR
  • Operating Temperature: -40°C~+150°C@(Tj)
  • Power Dissipation (Pd): 710mW
  • Total Gate Charge (Qg@Vgs): 11.25nC@10V
  • Drain Source Voltage (Vdss): 15V
  • Continuous Drain Current (Id): 2.18A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 90mΩ@2.5A,10V
  • Package: TSSOP-16
  • Manufacturer: Texas Instruments
  • Series: -
  • Technology: MOSFET (Metal Oxide)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
  • Supplier Device Package: 16-TSSOP
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Packaging: Cut Tape (CT)
  • FET Feature: -
  • Vgs (Max): +2V, -15V
  • Part Status: Active
  • Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V
  • Mounting Type: Surface Mount
  • Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta)
  • Drain to Source Voltage (Vdss): 15V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Power Dissipation (Max): 710mW (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Base Part Number: TPS110
  • FET Type: P-Channel
  • detail: P-Channel 15V 2.18A (Ta) 710mW (Ta) Surface Mount 16-TSSOP

محصولات مشابه